WebAug 30, 2024 · Simulations demonstrate that Dzyaloshinskii-Moriya interactions play a key role in this spin memory effect, and furthermore reveal that the topological charge is … WebOct 1, 2024 · In addition to memory devices like MRAM, theory shows that in certain situations the current-induced torques can cause the magnetization of a ferromagnetic layer to spin around, or precess, at a frequency controlled by the current. This technique could make possible gigahertz oscillators with a wide range of electronic uses.
Magnetic memory effect: Unfolding magnetic metastabilities
WebThe simplest method of generating a spin-polarised current in a metal is to pass the current through a ferromagnetic material. The most common applications of this effect involve giant magnetoresistance (GMR) devices. A typical GMR device consists of at least two layers of ferromagnetic materials separated by a spacer layer. WebSpin current magnetization reversal element, magnetoresistance effect element, and magnetic memory专利检索,Spin current magnetization reversal element, magnetoresistance effect element, and magnetic memory属于利用电—磁器件例如霍尔效应器件使用自旋转移效应的器件使用大型磁致电阻的器件或利用超导效应产生振荡)专利检 … how to setup a new ip address
[1702.03300] Spin memory effect for compact binaries in the post ...
WebFeb 21, 2015 · The conventional gravitational memory effect is a relative displacement in the position of two detectors induced by radiative energy flux. We find a new type of … WebFerroelectric organic field-effect transistor nonvolatile memories (Fe-OFET-NVMs) offer attractive features for future memory applications, such as flexible and wearable electronics. Polymer semiconductor-based top-gate Fe-OFET-NVMs possess natural advantages in the device structure and processing manufacturing, compared to small … WebThe spin memory effect is a recently predicted relativistic phenomenon in asymptotically flat spacetimes that become nonradiative infinitely far in the past and future. notice lost /found